Characterization of InGaP/GaAs heterointerfaces grown by metal organic vapour phase epitaxy

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 509-514

  Sharma, T K ^a   Arora, B M ^b   Gokhale, M R ^b   Rajgopalan, S ^c  

^a Semiconductor Laser Section   (India)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^c INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

INDIUM GALLIUM PHOSPHIDE;

HETEROJUNCTIONS;

EID: 0034507846     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00753-3     Document Type: Article

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