N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

Solid-State Electronics

Volumn 45, Issue 11, 2001, Pages 1945-1949

  Tan, C S ^a   Choi, W K ^a   Bera, L K ^a   Pey, K L ^a   Antoniadis, D A ^b   Fitzgerald, E A ^b   Currie, M T ^b   Maiti, C K ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

N2O oxidation; Strained Si relaxed SiGe heterostructure

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; HOLE MOBILITY; INTERFACES (MATERIALS); MOS DEVICES; MOSFET DEVICES; NITROGEN OXIDES; OXIDATION; POISSON DISTRIBUTION; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; ULTRAHIGH VACUUM;

HOLE CONFINEMENT;

HETEROJUNCTIONS;

EID: 0035501426     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00238-6     Document Type: Article

References (16)

1. CMOS scaling into the nanometer regime
2. x substrate
3. Room temperature electron mobility in strained Si/SiGe heterostructures
4. Relaxation of strained Si layers grown on SiGe buffers
5. 2O plasma
6. x/strained-Si structures for metal-oxide semiconductor applications
7. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
8. 2/SiGe interface
9. Thermal stability of undoped strained Si channel SiGe heterostructures
10. 1-x/Si heterostructures
11. 2O