Energy dependent electron and hole impact ionization in Si bipolar transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 885-888

  Palestri, P ^a   Selmi, L ^a   Hurkx, G A M ^a   Slotboom, J W ^a   Sangiorgi, E ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD MEASUREMENT; IMPACT IONIZATION; SEMICONDUCTING SILICON;

ENERGY DEPENDENT IONIZATION;

BIPOLAR TRANSISTORS;

EID: 0032276832     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)