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Journal of Crystal Growth

Volumn 217, Issue 4, 2000, Pages 355-359

Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

(8) Zhang, M H a Han, Y J a Zhang, Y H b Huang, Q a Bao, C L a Wang, W X a Zhou, J M a Lu, L W b

a INSTITUTE OF PHYSICS (China)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

Defect; Electroabsorption; LT MQWs; LT GaAs; Photoluminescence

Indexed keywords

EID: 0010212915 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00529-7 Document Type: Article

Times cited : (5)

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