Copper gate hydrogenated amorphous silicon TFT with thin buffer layers

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 324-326

  Lee, Sang Wook ^b   Cho, Kyu Sik ^b   Choo, Byung Kwon ^b   Jang, Jin ^a,b  

^a Kyung Hee University ^*

^b Kyung Hee University   (South Korea)

Author keywords

AMLCD; Low resistivity; Metal; Thin film transistor (TFT)

Indexed keywords

ADHESION; ALUMINUM NITRIDE; AMORPHOUS SILICON; COPPER; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; GATES (TRANSISTOR); MULTILAYERS; OHMIC CONTACTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; THRESHOLD VOLTAGE;

BUFFER LAYERS; FIELD EFFECT MOBILITY; GATE VOLTAGE SWING; GLASS SUBSTRATE; HYDROGENATED AMORPHOUS SILICON; PLASMA DAMAGE;

THIN FILM TRANSISTORS;

EID: 0036610427     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004223     Document Type: Letter

References (14)

1. Low temperature polycrystalline silicon thin film transistors
2. Limitation and prospects of a-Si:H TFTs
3. a-Si:H TFT technologies for large-size and high-pixel-density AM-LCDs
4. Effects of source/drain electrodes overlapping on the stopper-insulator in a self-aligned TFT-LCD
5. Copper metallization reliability
6. Low resistance copper address line for TFT-LCD
7. Planarized copper gate hydrogenated amorphous-silicon thin-film transistors for AM-LCDs
8. Self-passivated copper gates for amorphous silicon thin-film transistors
9. A six-mask TFT-LCD process using copper-cate metallurgy
10. 2/Si multilayers on the resistivity after annealing in an oxygen ambient
11. Factors affecting passivation of Cu(Mg) alloy films
12. + ohmic layer using a Ni-silicide
13. Coplanar amorphous silicon thin film transistor fabricated by inductively coupled plasma chemical vapor deposition