Effect of Mg content in Cu(Mg)/SiO2/Si multilayers on the resistivity after annealing in an oxygen ambient

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 6, 2000, Pages 2972-2977

  Lee, Wonhee ^a   Cho, Heunglyul ^a   Cho, Bumseok ^a   Kim, Jiyoung ^a   Kim, Yong Suk ^a   Jung, Woo Gwang ^a   Kwon, Hoon ^a   Lee, Jinhyung ^a   Lee, Chongmu ^b   Reucroft, P J ^c   Lee, Jaegab ^a  

^a Kookmin University   (South Korea)

^b Inha University   (South Korea)

^c UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERFACIAL ENERGY; MAGNESIA; OXIDATION; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SEGREGATION (METALLOGRAPHY); SILICA; TRANSMISSION ELECTRON MICROSCOPY;

SELF ALIGNED PASSIVATION;

MULTILAYERS;

EID: 0034318329     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1316101     Document Type: Article

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