Reactor design considerations for MOCVD growth of thin films

IEEE Transactions on Semiconductor Manufacturing

Volumn 10, Issue 2, 1997, Pages 295-306

  Nami, Ziba ^a,b   Erbil, Ahmet ^b   May, Gary S ^a,c  

^a IEEE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; THIN FILMS; TITANIUM DIOXIDE;

REACTOR CHAMBERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031143299     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.572085     Document Type: Article

References (29)

1. G. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice. Boston, MA: Academic, 1989.
2. H. Moffat and K. Jensen, "Complex flow pattern in MOCVD reactors I: Horizontal reactors," J. Cryst. Growth, vol. 77, p. 108, 1986.
3. G. Wahl, "Theoretical description of CVD processes," in Proc. 9th Int. Conf. Chemical Vapor Deposition, McD. Robinson, C. Van Den Brekel, G. W. Cullen, J. M. Blocher, Jr., and P. Rai-Choudhury, Eds., J. Electrochem. Soc., p. 60, 1984.
4. D. I. Fotiadis, S. Kieda, and K. F. Jensen, "Transport phenomena in vertical reactors for metal organic vapor phase epitaxy," J. Cryst. Growth, vol. 102, p. 441, 1990.
5. K. Jensen, "Transport phenomena and chemical reaction issues in MOCVD of compound semiconductors," J. Cryst. Growth, vol. 98, p. 148, 1989.
6. C. A. Wang, S. H. Groves, S. C. Palmateer, D. W. Weyburne, and R. A. Brown, "Flow visualization studies for optimization of OMVPE reactor design," J. Cryst. Growth, vol. 77, p. 136, 1986.
7. L. Giling, "Gas flow patterns in horizontal epitaxial reactor cells observed by interference holography," J. Electrochem. Soc., vol. 129, no. 3, 1982.
8. J. Zilko, "MOCVD technology and equipment," in Handbook of Thin Film Deposition Processes and Techniques, K. Schuegraf, Ed. Park Ridge, NJ: Noyes, 1988.
9. B. Secrest, W. Boyd, and D. Shaw, "Application of finite element method to mass transport limited epitaxial growth process," J. Cryst. Growth, vol. 10, p. 251, 1971.
10. M. Coltrin, R. Kee, and J. Miller, "A mathematical model of the coupled fluid mechanics and chemical kinetics in a chemical vapor deposition reactor," J. Electrochem. Soc., vol. 131, no. 2, p. 425, 1984.
11. D. I. Fotiadis, M. Boekholt, K. F. Jensen, and W. Richter, "Flow and heat transfer in CVD reactors: Comparison of raman temperature measurements and finite element model predictions," J. Cryst. Growth, vol. 100, p. 577, 1990.
12. J. Quazzani and F. Rosenberger, "Three-dimensional modeling of horizontal chemical vapor deposition I: MOCVD at atmospheric pressure," J. Cryst. Growth, vol. 100, p. 545, 1990.
13. C. Wang, K. Zaininger, and M. Duffy, "Vapor deposition and characterization of metal oxide thin films for electronic applications," RCA Review, p. 728, 1970.
14. 2 thin films," Thin Solid Films, vol. 147, p. 167, 1987.
15. FLUENT User Manual, Version 4.3, Creare.x Inc., Hanover, NH, 1995.
16. R. Bird, W. Steward, and E. Lightfoot, Transport Phenomena. New York: Wiley, 1960.
17. Y. Wu, D. Bradley, and R. Nix, "Studies of titanium dioxide film growth from titanium tetraisopropoxide," Appl. Surf. Sci., vol. 64, p. 21, 1993.
18. 2," Jpn. J. Appl. Phys., vol. 7, p. 96, 1968.
19. Z. Nami, O. Misman, A. Erbil, and G. S. May, "Computer simulation study on MOCVD process for titanium dioxide films," J. Cryst. Growth., to appear.
20. K. F. Jensen, D. I. Fotiadis, and T. J. Mountziaris, "Detailed models of the MOVPE process," J. Cryst. Growth, vol. 107, p. 1, 1991.
21. K. Chen and A. R. Mortazavi, "An analytical study of the chemical vapor deposition (CVD) process in a rotating pedestal reactor," J. Cryst. Growth, vol. 77, p. 199, 1986.
22. A. H. Dilawari and J. Szekely, "Computed results for the deposition rates and transport phenomena for an MOCVD system with a conical rotating substrate," J. Cryst. Growth, vol. 97, p. 777, 1989.
23. P. N. Gadgil, "Single wafer processing in stagnation point flow CVD reactor: Prospects, constraints, and reactor design," J. Electronics Materials, vol. 22, no. 2, p. 171, 1993.
24. E. M. Sparrow, R. Eichhorn, and J. L. Gregg, "Combined forced and free convection in a boundary layer flow," Phys. Fluids, vol. 2, p. 319, 1959.
25. G. Wahl, "Hydrodynamic description of CVD processes," Thin Solid Films, vol. 40, p. 13, 1977.
26. A. Erbil, K. Zhang, B. S. Kwak, and E. P. Boyd, "A review of metalorganic chemical vapor deposition of high-temperature superconducting thin films," Proc. SPIE, vol. 1187, p. 104, 1990.
27. D. I. Fotiadis, A. M. Kremer, D. R. McKenna, and K. Jensen, "Complex flow phenomena in vertical MOCVD reactors: Effects on deposition uniformity and interface abruptness," J. Cryst. Growth, vol. 85, p. 154, 1987.
28. P. N. Gadgil, "Optimization of a stagnation point flow reactor design for metalorganic chemical vapor deposition by flow visualization," J. Cryst. Growth, vol. 134, p. 302, 1993.
29. K. Matsumoto, K. Itoh, T. Tabuchi, and R. Tsunoda, "Flow patterns in various vertical reactors and MOVPE growth," J. Cryst. Growth, vol. 77, p. 151, 1986.