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Volumn 419, Issue 2-3, 1999, Pages 291-302

Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1̄1̄3̄)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing

(4) Setzer, C a Platen, J a Ranke, W a Jacobi, K a

a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

Author keywords

Angle resolved photoemission; Gallium arsenide; High index single crystal surfaces; Low energy electron diffraction; Molecular beam epitaxy; Soft X ray photoelectron spectroscopy (using synchrotron radiation); Surface structure, morphology, roughness, and

Indexed keywords

ANNEALING; ION BOMBARDMENT; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED PHOTOEMISSION; HIGH INDEX SINGLE CRYSTAL SURFACES; SURFACE CORE LEVEL SPECTROSCOPY; SURFACE RESONANCES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033521363 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00807-3 Document Type: Article

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