Diffusion of Ga on the GaAs (113) surface in the [11̄0] direction during MOVPE growth

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 433-436

  Pristovsek, Markus ^a   Menhal, Housni ^a   Zettler, Jörg Thomas ^a   Richter, Wolfgang ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DIFFUSION; IN SITU PROCESSING; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034299314     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00463-3     Document Type: Article

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