Surface-defect formation on heavily doped InAs and GaAs layers studied by scanning tunneling microscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 8, 1996, Pages 4565-4569

  Yamaguchi, Hiroshi ^a   Horikoshi, Yoshiji ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000189718     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.4565     Document Type: Article

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