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Volumn 507-510, Issue , 2002, Pages 394-400

Modeling of 3C-SiC(1 0 0) using the BFS method for alloys

Author keywords

Alloys; Computer simulations; Semi empirical models and model calculations; Semiconducting surfaces; Surface defects

Indexed keywords

ANISOTROPY; DEFECTS; DIMERS; INTERFACIAL ENERGY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SURFACE STRUCTURE;

EID: 0036608522     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01276-1     Document Type: Conference Paper
Times cited : (4)

References (32)
  • 13
    • 0003732720 scopus 로고
    • Structural Inorganic Chemistry
    • Clarendon Press Oxford
    • (1975)
    • Wells, A.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.