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Volumn 507-510, Issue , 2002, Pages 394-400
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Modeling of 3C-SiC(1 0 0) using the BFS method for alloys
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Author keywords
Alloys; Computer simulations; Semi empirical models and model calculations; Semiconducting surfaces; Surface defects
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Indexed keywords
ANISOTROPY;
DEFECTS;
DIMERS;
INTERFACIAL ENERGY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON ALLOYS;
SURFACE STRUCTURE;
SEMICONDUCTING SURFACES;
SILICON CARBIDE;
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EID: 0036608522
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)01276-1 Document Type: Conference Paper |
Times cited : (4)
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References (32)
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