Reaction of Si surfaces with a C2H4 beam

Surface Science

Volumn 380, Issue 1, 1997, Pages 131-144

  Kusunoki, I ^a   Takagaki, T ^a,b   Ishidzuka, S ^a   Igari, Y ^a   Takaoka, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Alkenes; Molecule solid reactions; Plasmons; Silicon; Silicon carbide; X ray photoelectron spectroscopy

Indexed keywords

CARBON; CHEMICAL BONDS; CHEMISORPTION; DIFFUSION IN SOLIDS; ETHYLENE; FILM GROWTH; HIGH TEMPERATURE EFFECTS; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

FULL WIDTH HALF MAXIMUM (FWHM); PLASMONS;

SEMICONDUCTING SILICON;

EID: 0031141184     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00007-1     Document Type: Article

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