Fabrication of gate-all-around MOSFET by silicon anisotropic etching technique

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1623-1626

  Mukaiyama, Toshikazu ^a   Saito, Ken Ichi ^a   Ishikuro, Hiroki ^a   Takamiya, Makoto ^a   Saraya, Takuya ^a   Hiramoto, Toshiro ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; ETCHING; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

CURRENT DRIVABILITY;

MOSFET DEVICES;

EID: 0032121382     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00082-3     Document Type: Article

References (9)

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