Fabrication of Si nanostructures for single electron device applications by anisotropic etching

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 35, Issue 12 B, 1996, Pages 6347-6695

  Hiramoto, Toshiro ^a   Ishikuro, Hiroki ^a   Saito, Kenichi ^a   Fujii, Tomoyuki ^a   Saraya, Takuya ^a   Hashiguchi, Gen ^a   Ikoma, Toshiaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; MOSFET DEVICES; NANOTECHNOLOGY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; VLSI CIRCUITS;

ANISOTROPIC ETCHING; SINGLE ELECTRON DEVICE;

ELECTRON DEVICES;

EID: 0030407251     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Review

References (6)