High performance gate-all-around devices using Metal Induced Lateral Crystallization

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 112-113

  Chan, Victor W C ^a   Chan, Philip C H ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; LITHOGRAPHY; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

METAL INDUCED LATERAL CRYSTALLIZATION (MILC);

GATES (TRANSISTOR);

EID: 0034474229     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)