Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy

Applied Physics Letters

Volumn 77, Issue 14, 2000, Pages 2148-2150

  Ayabe, A ^a   Asahi, H ^a   Lee, H J ^a   Maeda, O ^a   Konishi, K ^a   Asami, K ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001468224     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1314881     Document Type: Article

References (12)

1. H. Asahi, K. Yamamoto, K. Iwata, S. Gonda, and K. Oe, Jpn. J. Appl. Phys., Part 2 35, L876 (1996).
2. H. Asahi, Compd. Semicond. 2, 34 (1996).
3. H. Asahi, M. Fushida, H. Koh, K. Yamamoto, K. Asami, S. Gonda, and K. Oe, in Proceedings of the 9th International Conference on Indium Phosphide and Related Materials, Hyannis, MA (IEEE, Piscataway, NJ, 1997), p. 448.
4. W. S. Pelouch and L. A. Schlie, Appl. Phys. Lett. 68, 1389 (1996).
5. K. Oe and H. Asai, IEICE Trans. Electron. E79-C. 1751 (1996).
6. M. van Schilfgaarde, A. B. Chen, S. Krishnamurthy, and A. Sher, Appl. Phys. Lett. 65, 2714 (1994).
7. M. Fushida, H. Asahi, K. Yamamoto, H. Koh, K. Asami, S. Gonda, and K. Oe, Jpn. J. Appl. Phys., Part 2 36, L665 (1997).
8. H. Koh, H. Asahi, M. Fushida, K. Yamamoto, K. Asami, S. Gonda, and K. Oe, J. Cryst. Growth 188, 107 (1998).
9. K. Takenaka, H. Asahi, H. Koh, K. Asami, S. Gonda, and K. Oe, Jpn. J. Appl. Phys., Part 1 38, 1026 (1999).
10. M. J. Antonell, C. R. Abernathy, A. Sher, M. Berding, M. van Schilfgaarde, A. Sanjuro, and K. Wong, J. Cryst. Growth 188, 113 (1998).
11. M. D. Lange, D. F. Storm, and T. Cole, J. Electron. Mater. 27, 536 (1998).
12. H. Asahi, K. Takenaka, H. Koh, K. Oe, K. Asami, and S. Gonda, Inst. Phys. Conf. Ser. 162, 541 (1999).