Low-temperature metalorganic vapor-phase epitaxial growth of InGaAs layers on InP substrates

Journal of Crystal Growth

Volumn 219, Issue 1-2, 2000, Pages 10-16

  Oe, Kunishige ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

InGaAs; Low temperature epitaxial growth; Metastable alloy; MOVPE

Indexed keywords

EID: 0002536018     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00576-5     Document Type: Article

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