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Volumn 35, Issue 7 SUPPL. B, 1996, Pages
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New III-V compound semiconductors TlInGaP for 0.9 μm to over 10 μm wavelength range laser diodes and their first successful growth
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Author keywords
Gas source MBE; Infrared; InP; Lattice match; Mid infrared; Temperature independent band gap; Thallium alloy; TlInGaP; TlInP; TlP
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Indexed keywords
BAND STRUCTURE;
HETEROJUNCTIONS;
MOLECULAR BEAM EPITAXY;
PHASE SEPARATION;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
SURFACE TREATMENT;
THALLIUM ALLOYS;
THALLIUM COMPOUNDS;
X RAY DIFFRACTION;
CONDUCTION BAND;
GAS SOURCE MOLECULAR BEAM EPITAXY;
SURFACE RECONSTRUCTION;
THALLIUM INDIUM GALLIUM PHOSPHIDE;
VALENCE BAND;
WAVE DIVISION MULTIPLEXING OPTICAL FIBER COMMUNICATION;
WAVELENGTH RANGE LASER DIODES;
X RAY DIFFRACTION MEASUREMENT;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0030189998
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.l876 Document Type: Article |
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Times cited : (67)
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References (9)
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