Structural and energy-gap characterization of metalorganic-vapor-phase-epitaxy-grown InAsBi

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1022-1025

  Okamoto, Hiroshi ^a   Oe, Kunishige ^a,b  

^a NTT CORPORATION   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Channeling; Energy gap; InAsBi; MOVPE; Optical transmission; RBS; Temperature dependence

Indexed keywords

ENERGY GAP; LIGHT TRANSMISSION; LINEAR EQUATIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

INDIUM ARSENIDE BISMUTH; TEMPERATURE DEPENDENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032633736     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1022     Document Type: Article

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