Surface processing of silicon carbide substrates

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 370-373

  Bakin, A S ^a   Dorozhkin, S I ^a   Bogachov, S V ^a   Kazak Kazakevich, A Z ^a   Lyutetskaja, I G ^a   Sazanov, A P ^a  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

Author keywords

Epitaxial growth; Silicon carbide; Surface processing

Indexed keywords

EPITAXIAL GROWTH; MORPHOLOGY; SUBSTRATES; SURFACE STRUCTURE; SURFACE TREATMENT;

SURFACE PROCESSING;

SILICON CARBIDE;

EID: 0009539659     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02008-9     Document Type: Article

References (3)

1. P.H. Yih and A.J. Steckl, J. Elecrochem. Soc., 142 (8) (1995) 2853-2860.
2. C. Hallin, A.S. Bakin, F. Owman, P. Martensson, O. Kordina and E. Janzen, Paper presented at ICSCRM'95, Kyoto, Japan, 1996, Inst. Phys. Conf., Ser. No. 142, ch. 3, pp. 613-616.
3. V.V. Luchinin, A.A. Petrov, Czhan Hi Yang and A.P. Sazanov, Trans. 2nd Int. High Temp. Electronics Conf., Vol. 2, Charlotte, USA, 1996, pp. 243-246.