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Surface Science

Volumn 506, Issue 3, 2002, Pages 313-332

Composition and chemical state of the ions of aluminium-oxide films formed by thermal oxidation of aluminium

(4) Jeurgens, L P H a Sloof, W G a Tichelaar, F D a Mittemeijer, E J a,b

a DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

Author keywords

Aluminum; Aluminum oxide; Amorphous thin films; Insulating films; Oxidation; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS FILMS; BINDING ENERGY; COMPOSITION; CRYSTALLINE MATERIALS; FERMI LEVEL; HIGH TEMPERATURE EFFECTS; IONS; KINETIC ENERGY; STOICHIOMETRY; THERMOOXIDATION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

PARTIAL OXYGEN PRESSURE;

ALUMINA;

EID: 0036570791 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)01432-2 Document Type: Article

Times cited : (111)

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