Deuterium channeling study of disorder in Al22+-implanted 6H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 636-640

  Jiang, W ^a   Weber, W J ^a   Thevuthasan, S ^a   Shutthanandan, V ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

6H SiC; Disorder accumulation and recovery; Ion beam irradiation; RBS and NRA channeling analyses

Indexed keywords

ALUMINUM; ANNEALING; CRYSTAL LATTICES; DEUTERIUM; ION IMPLANTATION; IRRADIATION; NUCLEAR PHYSICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; THERMAL EFFECTS;

ION-BEAM IRRADIATION;

SILICON WAFERS;

EID: 0036570191     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01194-6     Document Type: Conference Paper

References (20)