A 900MHz SOI fully-integrated RF power amplifier for wireless transceivers

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2000, Pages 382-383

  Kumar, M ^a   Tan, Y ^a   Sin, J ^a   Shi, L ^a   Lau, J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; OPTIMIZATION; POWER AMPLIFIERS; RESONANT CIRCUITS; SILICON ON INSULATOR TECHNOLOGY; TRANSCEIVERS; WIRELESS TELECOMMUNICATION SYSTEMS;

POWER TRANSISTORS;

RADIO FREQUENCY AMPLIFIERS;

EID: 0034430390     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A 3.5mW 2.5GHz diversity receiver and a 1.2mW 3.6GHz VCO in silicon-on-anything
2. Thin-film SOI emerges
3. A SOILDMOS/CMOS/BJT technology for single-chip wireless transceiver applications
4. Low voltage, high efficiency GaAs class E power amplifiers for wireless transmitters