A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 137-140

  Tan, Y ^a   Kumar, M ^a   Sin, J K O ^a   Shi, L ^a   Lau, J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHANNEL CAPACITY; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; MOS DEVICES; PERFORMANCE; Q FACTOR MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TRANSCEIVERS; WIRELESS TELECOMMUNICATION SYSTEMS;

BANDBAND CIRCUITS; ON-CHIP INDUCTORS;

POWER AMPLIFIERS;

EID: 0034450131     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Integrated circuit technology options for RFIC's - Present status and future directions
2. 2-GHz Si power MOSFET technology
3. High performance silicon LDMOS technology for 2GHz RF power amplifier application
4. A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers
5. A 900MHz SOI fully-integrated RF power amplifier for wireless transceivers
6. IC compatible planar inductors on silicon