Use of very low energy in situ focused ion beams for three-dimensional dopant patterning during molecular beam epitaxial growth

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3933-3937

  Sazio, P J A ^a   Thompson, J H ^a   Jones, G A C ^a   Linfield, E H ^a   Ritchie, D A ^a   Houlton, M ^b   Smith, G W ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Def Res Agy Electronics Division   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006155542     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588698     Document Type: Article

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