Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2930-2933

  Yanagisawa, Junichi ^a   Nakayama, Hiromasa ^a   Oka, Kenji ^a   Nakai, Masaya ^a   Wakaya, Fujio ^a   Yuba, Yoshihiko ^a   Takaoka, Sadao ^a   Murase, Kazuo ^a   Gamo, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006252922     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589757     Document Type: Article

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