Characterization of HgCdTe P-on-n heterojunction photodiodes and their defects using variable-area test structures

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 635-642

  Weiler, M H ^a   Tarnowski, G J ^a  

^a Lockheed Martin IR Imaging Systems   (United States)

Author keywords

Defects; Diode; HgCdTe; Lateral collection; Surface inversion channel; Surface recombination

Indexed keywords

EID: 0001701475     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0208-3     Document Type: Article

References (10)

1. M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mroczkowski and E.K. Krueger, Semicond. Sci. 8, 788 (1993).
2. H.K. Chung, M.A. Rosenberg and P.H. Zimmermann, J. Vac. Sci. Technol. A 3 (1), 189 (1985).
3. D.R. Rhiger, J.M. Peterson, F.I. Gesswein and C.A. Cockrum, private communication (unpublished); see also S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor and M.E. Boyd, J. Vac. Sci. Technol. B 10 (4), 1499 (1992).
4. D.R. Rhiger, J.M. Peterson, F.I. Gesswein and C.A. Cockrum, private communication (unpublished); see also S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor and M.E. Boyd, J. Vac. Sci. Technol. B 10 (4), 1499 (1992).
5. G.J. Tarnowski, M.S. Thesis, Massachusetts Institute of Technology, May, 1993.
6. R. Briggs, Intl. Electron. Dev. Mtg., 1981.
7. B. Carnahan, H. Luther and J. Wilkes, Applied Numerical Methods (New York: Wiley and Sons, New York, 1969).
8. D.T. Cheung, Infrared Phys. 21, 301 (1981).
9. M.B. Reine, A.K. Sood and T.J. Tredwell, Semiconductors and Semimetals, eds. R.K. Willardson and A.C. Beer (New York: Academic Press, New York, 1981), Vol. 18.
10. M. Cutler and H.M. Bath, Proc. IRE 45, 39 (1957).