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Volumn 33, Issue 3, 2002, Pages 238-244
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Comparison of the Tougaard, ARXPS, RBS and ellipsometry methods to determine the thickness of thin SiO2 layers
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Author keywords
ARXPS; Ellipsometry; RBS; SiO2 layers; Tougaard method; XPS
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Indexed keywords
COMPUTER AIDED ANALYSIS;
ELECTRON EMISSION;
ELECTRON SCATTERING;
ELLIPSOMETRY;
MORPHOLOGY;
MULTILAYERS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICA;
SUBSTRATES;
THICKNESS MEASUREMENT;
X RAY PHOTOELECTRON SPECTROSCOPY;
ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY;
INELASTIC MEAN FREE PATH;
ROOT-MEAN-SQUARE DEVIATION;
SOFTWARE PACKAGE QUASES-ARXPS;
SOFTWARE PACKAGE QUASES-TOUGAARD;
TOUGAARD METHODS;
SURFACES;
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EID: 0036500245
PISSN: 01422421
EISSN: None
Source Type: Journal
DOI: 10.1002/sia.1206 Document Type: Article |
Times cited : (16)
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References (22)
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