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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1106-1110

Strong graded interface related piezoelectric polarization weakening effects on exciton confinement in single InxGa1-xN/GaN quantum wells

(4) Caetano, E W S a Freire, V N a Farias, G A a Da Silva, E F b

a FEDERAL UNIVERSITY OF CEARÁ (Brazil)

b FEDERAL UNIVERSITY OF PERNAMBUCO (Brazil)

Author keywords

Graded interfaces; InGan GaN quantum wells; Piezoelectric polarization; Quantum confined exciton; Strain

Indexed keywords

EXCITONS; GALLIUM NITRIDE; INTERFACES (MATERIALS); MONOLAYERS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

QUANTUM CONFINED EXCITONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036492833 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(02)00314-4 Document Type: Article

Times cited : (4)

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