Examination of surface elementary reaction model for chemical vapor deposition of Al using in situ infrared reflection absorption spectroscopy: Teoretical optimization procedure (3)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 570-576

  Sugiyama, Masakazu ^a   Ogawa, Hiroki ^a   Sato, Yusuke ^a,b   Itoh, Hitoshi ^a   Aoyama, Jyun Ichi ^b   Horiike, Yasuhiko ^a   Komiyama, Hiroshi ^c   Shimogaki, Yukihiro ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c Semiconductor of Technology Academic Research Center   (Japan)

Author keywords

Al; Chemical vapor deposition (CVD); Dimethylaluminumhydride (DMAH); Infrared reflection absorption spectroscopy (IRAS); Reaction model; Surface adsorbate; Surface oxidation

Indexed keywords

ABSORPTION SPECTROSCOPY; ADSORBENTS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; INFRARED SPECTROSCOPY; METALLIC FILMS; OPTIMIZATION; OXIDATION; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY; SURFACE REACTIONS;

INFRARED REFLECTION ABSORPTION SPECTROSCOPY (IRAS);

ALUMINUM;

EID: 0036478463     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.570     Document Type: Article

References (15)