Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications

IEEE Transactions on Electron Devices

Volumn 47, Issue 8, 2000, Pages 1553-1559

  Liu, Wen Chau ^a,b   Wang, Wei Chou ^b   Pan, Hsi Jen ^b   Chen, Jing Yuh ^b   Cheng, Shiou Ying ^a,c   Lin, Kun Wei ^b   Yu, Kuo Hui ^b   Thei, Kong Beng ^b   Cheng, Chin Chuan ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM INDIUM GALLIUM ARSENIDE; AVALANCHE MULTIPLICATION; BARRIER LOWERING EFFECT; MULTIPLE NEGATIVE DIFFERENCE RESISTANCE (MNDR) PHENOMENA; MULTIPLE VALUED LOGIC;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

SEMICONDUCTOR SWITCHES;

EID: 0034247687     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.853030     Document Type: Article

References (14)

1. C. Y. Lu et al., "High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI," IEEE Trans. Electron Devices, vol. 36, pp. 2530-2536, 1989.
2. C. Y. Lu et al., "Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/junction formation in submicrometer CMOS devices," IEEE Trans. Electron Devices, vol. 38, pp. 246-254, 1991.
3. Y. K. Fang, C. R. Liu, K. H. Chen, and J. D. Hwang, "A silicon double switching inversion-controlled switch for multiple-valued logic applications," IEEE Trans. Electron Devices, vol. 40, pp. 918-922, June 1993.
4. W. C. Liu et al., "Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-value logic applications," IEEE J. Quantum Electron., vol. 32, pp. 1615-1619, 1996.
5. A. Bhattacharya and D. Botez, "High-power near-resonant 1.55 μm emitting InGaAsP/InP antiguided diode laser arrays," Appl. Phys. Lett., vol. 72, pp. 138-140, 1998.
6. Y. Ozeki and C. L. Tang, "New two-mode bistability in an asymmetric absorptive multisection laser diode," IEEE J. Quantum Electron., vol. 27, pp. 1160-1170, 1991.
7. D. F. Guo, "An optoelectronic switch based on a triangular-barrier structure," IEEE J. Quantum Electron., vol. 34, pp. 1882-1885, 1998.
8. R. W. Glew et al., "Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasers'," J. Cryst. Growth, vol. 107, pp. 784-789, 1991.
9. M. L. Xu et al., "Ultra-high differential gain in GaInAs-AlGaInAs quantum wells: Experiment and modeling," IEEE Photon. Technol. Lett., vol. 79, pp. 947-949, 1995.
10. yAs epitaxial layers on InP substrate," J. Vac. Sci. Technol. B, vol. 14, pp. 1719-1724, 1996.
11. 0.47As-InP double-barrier structures," Appl. Phys. Lett., vol. 50, pp. 212-214, 1987.
12. A. A. Lakhani and R. C. Potter, "Combining resonant tunneling diodes for signal processing and multiple logic," Appl. Phys. Lett., vol. 52, pp. 1684-1685, 1988.
13. A. A. Lakhani, H. S. Hier, and R. C. Potter, "Eleven-bit parity generator with a single, vertically integrated resonant tunneling device," IEE Electron. Lett., vol. 24, pp. 681-683, 1988.
14. C. A. Wang et al., "AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometalic vapor phase epitaxy," Appl. Phys. Lett., vol. 58, pp. 2208-2210, 1991.