A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 857-859

  Lin, H C ^a   Lin, C Y ^a   Yeh, K L ^b   Huang, R G ^b   Wang, M F ^b   Yu, C M ^b   Huang, T Y ^a   Sze, S M ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); LEAKAGE CURRENTS; MESFET DEVICES; MOSFET DEVICES; NANOTECHNOLOGY; POLYSILICON; THIN FILM TRANSISTORS;

NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC);

MOS DEVICES;

EID: 0034446043     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904452     Document Type: Article

References (7)