Lattice site location of ion-implanted 8Li in Silicon Carbide

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1046-1052

  Virdis, S ^a   Vetter, U ^a   Ronning, C ^a   Kroger H ^a   Hofsass H ^a   Dietrich, M ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA EMISSIONS; BLOCKING EFFECT; CRYSTALLOGRAPHIC DIRECTIONS; DEFECT INTERACTIONS; EMISSION CHANNELING; HEXAGONAL LATTICE; IMPLANTATION TEMPERATURE; INTERSTITIAL SITES; LATTICE SITES; LI ATOMS; LI DIFFUSION; TEMPERATURE REGIMES; TETRAHEDRAL SYMMETRY;

EPITAXIAL GROWTH; IONS;

SILICON CARBIDE;

EID: 0036470846     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425442     Document Type: Article

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