RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 1168-1171

  Barradas, N P ^a   Jeynes, C ^a   Jackson, S M ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Buried silicon oxide; Cubic silicon carbide; Multiple scattering; Plural scattering; RBS; Simulated annealing

Indexed keywords

COMBINATORIAL MATHEMATICS; ION IMPLANTATION; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SIMULATED ANNEALING;

CUBIC SILICON CARBIDE; MULTIPLE SCATTERING;

SILICON CARBIDE;

EID: 0032019601     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00686-1     Document Type: Article

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