Investigation of the damage induced by 200 keV Ge+ ion implantation in 6H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 321-324

  Pacaud, Y ^a   Skorupa, W ^a   Perez Rodriguez, A ^b   Brauer, G ^c   Stoemenos, J ^d   Barklie, R C ^e  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF BARCELONA   (Spain)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^d ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^e TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); ION BEAMS; RADIATION EFFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION;

ION IMPLANTATION;

EID: 0030563232     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01006-8     Document Type: Article

References (5)

1. V. Heera, J. Stoemenos, R. Kögler, W. Skorupa, J. Appl. Phys. 77 (1995) 2999.
2. G. Brauer, W. Anwand, Y. Pacaud, W. Skorupa, F. Plazaola, P.O. Coleman, A.P. Knights, J. Stoermer, P. Willutzki, to be published,
3. J.A. Spitznagel, S. Wood, W.J. Choyke, N.J. Doyle, J. Bradshaw, S.G. Fishman, Nucl. Instr. and Meth. B 16 (1986) 237.
4. Y. Pacaud, A. Perez-Rodriguez, J.R. Morante, G. Brauer, P.G. Coleman, A.P. Knights, W. Skorupa, to be published.
5. F. Finocchi, G. Galli, M. Parrinello, C.M. Bertoni, Phys. Rev Lett. 68 (1992) 3044.