MOVPE process development for 650 nm VCSELS using optical in-situ techniques

Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 25-34

  Zorn, M ^a   Haberland, K ^b,c   Knigge, A ^a   Bhattacharya, A ^a   Weyers, M ^a   Zettler, J T ^b,c   Richter, W ^b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c LayTec GmbH PN 5 7   (Germany)

Author keywords

A3. Laser epitaxy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials; B3. In situ reflectance; B3. Laser diodes; B3. Reflectance anisotropy spectroscopy

Indexed keywords

ANISOTROPY; CONTINUOUS WAVE LASERS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL SENSORS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

REFLECTANCE ANISOTROPY SPECTROSCOPY;

SEMICONDUCTOR LASERS;

EID: 0036467188     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01758-4     Document Type: Article

References (24)