Real-time controlled epitaxy of vertical cavity surface emitting lasers (VCSELs) using a standard pyrometer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3286, Issue , 1998, Pages 113-120

  Bohm G ^a   Hauser, M ^a   Sexl, M ^a   Trankle G ^a   Weimann, G ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

In situ monitoring; Pyrometer; Real time controlled growth; VCSEL

Indexed keywords

FABRICATION; GROWTH KINETICS; MIRRORS; MOLECULAR BEAM EPITAXY; MONITORING; PYROMETERS; REAL TIME SYSTEMS; REFRACTIVE INDEX; SEMICONDUCTOR QUANTUM WELLS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032224042     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.305452     Document Type: Conference Paper

References (2)

1. Int. symp. comp. semicond. St. Petersburg (Russia)