Optimization of MOVPE growth for 650 nm-emitting VCSELs

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 663-667

  Bhattacharya, A ^a   Zorn, M ^a   Oster, A ^a   Nasarek, M ^a   Wenzel, H ^a   Sebastian, J ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; HETEROJUNCTIONS; LIGHT REFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM ARSENIDE; ALUMINUM GALLIUM ARSENIDE; ALUMINUM GALLIUM INDIUM PHOSPHIDE; BRAGG REFLECTORS; GALLIUM INDIUM PHOSPHIDE; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034510688     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00796-X     Document Type: Article

References (8)

1. Jewell J.L., Harbison J.P., Scherer A., Lee Y.H., Florez L.T. IEEE J. Quant. Electron. QE-27:1991;1332.
2. Chow W.W., Choquette K.D., Crawford M.H., Lear K.L., Hadley G.R. IEEE J. Quant. Electron. QE-33:1997;1810.
3. Schneider R.P. Jr., Lott J.A., Lear K.L., Choquette K.D., Crawford M.H., Kilcoyne S.P., Fiegel J.J. J. Crystal Growth. 145:1994;838.
4. Bour D.P., Geels R.S., Treat D.W., Paoli T.L., Ponce F., Thornton R.L., Krusor B.S., Bringans R.D., Welch D.F. IEEE J. Quant. Electron. QE-30:1994;593.
5. Nasarek M. Diplomarbeit. 2000;Humboldt Universitaet, Berlin.
6. Schneider R.P. Jr., Bryan R.P., Lott J.A., Jones E.D., Olbright G.R. J. Crystal Growth. 124:1992;763.
7. Lear K.L., Schneider R.P. Jr. Appl. Phys. Lett. 62:1996;605.
8. Bugge F., Beister G., Erbert G., Gramlich S., Vogel K., Zeimer U., Weyers M. Inst. Phys. Conf. Ser. 155:1997;573.