Spectroscopic process sensors in MOVPE device production

Applied Physics A: Materials Science and Processing

Volumn 68, Issue 3, 1999, Pages 309-313

  Haberland, K ^a   Kurpas, P ^b   Pristovsek, M ^a   Zettler, J T ^a   Weyers, M ^b   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL SENSORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS); SPECTROSCOPIC PROCESS SENSORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033101281     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050893     Document Type: Article

References (20)

1. G. Bauer, W. Richter (Eds.): Optical Characterization of Epitaxial Semiconductor Layers (Springer, Berlin, Heidelberg 1996)
2. J.-T. Zettler: Prog. Chrystal Growth Charact. 35, 27 (1997)
3. W. Richter, J.-T. Zettler: Appl. Surf. Sci. 100/101, 465 (1996)
4. T. Trepk, M. Zorn, M. Klein, K. Knorr, A. Krost, J.-T. Zettler, W. Richter: Thin Solid Films 313-314, 496 (1998)
5. D.E. Aspnes, J.P. Harbison, A.A. Studna, L.T. Florez, M.K. Kelly: J. Vac. Sci. Technol. 6, 1327 (1988)
6. S.M. Koch, O. Acher, F. Omnes, M. Defour, B. Drévillon, M. Razeghi: J. Appl. Phys. 69(3), (1991)
7. E. Colas, D.E. Aspens, R. Bhat, A.A. Studna, J.P. Harbison, L.T. Florez, M.A. Koza, V.G. Keramides: J. Cryst. Growth 107, 47 (1991)
8. K. Haberland, O. Hunderi, M. Pristovsek, J.-T. Zettler, W. Richter: Thin Solid Films 313-314, 620 (1998)
9. P. Kurpas, M. Ahrens, D. Gutsche, E. Richter, F. Brunner, M. Weyers: Proceedings of ICMOVPE-IX: J. Cryst. Growth (1998), in print
10. P. Kurpas, E. Richter, M. Sato, F. Brunner, D. Gutsche, M. Weyers: J. Cryst. Growth 170, 442 (1997)
11. O. Hunderi, J.-T. Zettler, K. Haberland: Patent No. DE 197 21 044.9 (1997)
12. Hinds Instruments Inc., User Manual for PEM-90, Hillsboro, USA (1991)
13. J.-T. Zettler, K. Haberland: Patent No. DE 197 45 607.3 (1997)
14. J.-T. Zettler, K. Haberland: Patent No. DE 198 25 390.7 (1998)
15. P. Kurpas, A. Rumberg, M. Weyers, K. Knorr, T. Bergunde, M. Sato, W. Richter: J. Cryst. Growth 170, 203 (1997)
16. H. Tanaka, E. Colas, I. Kamiya, D.E. Aspnes, R. Bhat: Appl. Phys. Lett. 59(26), 3443 (1991)
17. Z. Sobiesierski, D.I. Westwood, D.A. Woolf: J. Vac. Sci. Technol. B 14(4), 3065 (1996)
18. J.-T. Zettler, K. Haberland, M. Zorn, M. Pristovsek, P. Kurpas, M. Weyers, W. Richter: Proceedings of ICMOVPE-IX: J. Cryst. Growth (1998), in print
19. M. Zorn, T. Trepk, P. Kurpas, J.-T. Zettler, A. Knauer, M. Weyers, W. Richter: Proceedings of ICMOVPE-IX: J. Cryst. Growth (1998), in print
20. D.W. Kisker, G.B. Stephenson, I. Kamiya, P.H. Fuoss, D.E. Aspnes, L. Mantese, S. Brennan: Phys. Status Solidi A 152, 9 (1995)