High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers

Electronics Letters

Volumn 37, Issue 20, 2001, Pages 1222-1223

  Knigge, A ^a   Zorn, M ^a   Wenzel, H ^a   Weyers, M ^a   Trankle G ^a  

^a FBIH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; OPTICAL FIBERS; POWER CONTROL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LASER EMISSION; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

CONTINUOUS WAVE LASERS;

EID: 0035959738     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010831     Document Type: Article

References (7)

1. Continous wave operation of 640-660 nm selectively oxidised AlGaInP vertical-cavity lasers
2. Improved performance of selectively oxidized visible VCSELs
3. Development of a red VCSEL-to-plastic fiber module for use in parallel optical data links
4. Room-temperature CW operation of red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
5. Visible (630-650nm) vertical cavity surface emitting lasers with Al-oxide/Al-GaInP/AlGaAs distributed Bragg reflectors
6. Optimization of MOVPE-growth for 650nm-emitting VCSELs
7. Origin of the time dependence of wet oxidation of AlGaAs