Ellipsometric and reflectance-anisotropy measurements on rotating samples

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 620-624

  Haberland, K ^a   Hunderi, O ^b   Pristovsek, M ^a   Zettler, J T ^a   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

Ellipsometry; In situ spectroscopy; Real time monitoring; Reflectance anisotropy spectroscopy

Indexed keywords

ANISOTROPY; ELLIPSOMETRY; EPITAXIAL GROWTH; REFLECTOMETERS; SIGNAL DISTORTION; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTOR GROWTH;

EID: 0032000383     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00897-3     Document Type: Article

References (5)

1. G.N. Maracas, C.H. Kuo, S. Anand, R. Droopad, G.R.L. Sohie, T. Levola, J. Vac. Sci. Technol. A 13 (1995) 727.
2. J.S. Luo, J.F. Geisz, J.M. Olson, M.C. Wu, J. Cryst. Growth (in press).
3. O. Hunderi, J.-T. Zettler, K. Haberland, Patent No. DE 197 21 044.9, 1997.
4. D.E. Aspnes, J.P. Harbison, A.A. Studna, L.T. Florez, M.K. Kelly, J. Vac. Sci. Technol. 6 (1988) 1327.
5. K. Hingerl, D.E. Aspnes, I. Kamiya, L.T. Florez, Appl. Phys. Lett. 63 (1993) 885.