Effects of residual aberrations on line-end shortening in 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1421-1432

  Cheng, Mosong ^a   Neureuther, Andrew ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

193 nm lithography; Lens aberrations; Model calibration; Resist; Variable threshold model

Indexed keywords

ABERRATIONS; CALIBRATION; COMPUTER SIMULATION; IMAGE ANALYSIS; LENSES;

LENS ABERRATIONS;

PHOTORESISTS;

EID: 0036416653     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474526     Document Type: Conference Paper

References (11)

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