Corner rounding and line-end shortening in optical lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4226, Issue , 2000, Pages 83-92

  Mack, C A ^a  

^a KLA Tencor Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ERRORS; IMAGE ANALYSIS; INTEGRATED CIRCUIT MANUFACTURE; MASKS; MECHANICAL VARIABLES CONTROL; OPTICAL DEVICES; OPTIMIZATION; PHOTORESISTS; QUALITY CONTROL; SILICON WAFERS;

CORNER ROUNDING; LINE END SHORTENING; PATTERN FIDELITY; RETICLE;

PHOTOLITHOGRAPHY;

EID: 0034453146     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.404843     Document Type: Conference Paper

References (6)

1. Lithography performance of contact holes - Part I. Optimization of pattern fidelity using MPG and MPG-II
2. Fundamental differences between positive and negative tone imaging
3. Fundamental differences between positive and negative tone imaging
4. The natural resolution
5. Lithography performance of contact holes - Part II: Simulation of the effects of reticle corner rounding on wafer print performance