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Volumn 4649, Issue , 2002, Pages 130-141

Oxide VCSEL reliability qualification at Agilent Technologies

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; ELECTRONICS PACKAGING; FAILURE ANALYSIS; THERMOCOUPLES; TRANSCEIVERS;

EID: 0036408082     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.469227     Document Type: Conference Paper
Times cited : (20)

References (19)
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    • Optoelectronic reliability study for 850nm implant VCSEL
    • dated Sept
    • Bobby Hawthorne, "Optoelectronic Reliability Study for 850nm implant VCSEL", dated Sept. 2001 available on web site at www.honeywell.com/sensing/VCSEL
    • (2001)
    • Hawthorne, B.1
  • 4
    • 0011109541 scopus 로고    scopus 로고
    • Oxide isolated VCSEL reliability summary
    • dated April; See also papers by Honeywell in this volume, and in ECTC 2002 proceedings
    • Bobbt Hawthorne, "Oxide Isolated VCSEL Reliability Summary", dated April 2001, available on web site at www.honeywell.com/sensing/VCSEL/. See also papers by Honeywell in this volume, and in ECTC 2002 proceedings.
    • (2001)
    • Hawthorne, B.1
  • 5
    • 0036408177 scopus 로고    scopus 로고
    • Production of high-speed oxide confined VCSEL arrays for datacom applications
    • in this volume; paper 22a
    • David J. Bossert, Doug Collins, I. Aeby, J. Bridget Clevenger, Chris Helms, Welin Luo, Charlie X. Wang, Hong Q. Hou, "Production of high-speed oxide confined VCSEL arrays for datacom applications," in this volume, Proc of SPIE, vol. 4649, paper 22a, (2002).
    • (2002) Proc of SPIE , vol.4649
    • Bossert, D.J.1    Collins, D.2    Aeby, I.3    Clevenger, J.B.4    Helms, C.5    Luo, W.6    Wang, C.X.7    Hou, H.Q.8
  • 6
    • 0026264187 scopus 로고
    • Diode laser degradation mechanisms, a review
    • R.G. Waters, Diode laser degradation mechanisms, a review," Progress in Quantum Electronics, vol. 15, pp. 153-174, (1991)
    • (1991) Progress in Quantum Electronics , vol.15 , pp. 153-174
    • Waters, R.G.1
  • 7
    • 0011111690 scopus 로고
    • Dark-line observations in failed quantum well lasers
    • R.G. Waters and R.K. Bertaska, "Dark-line observations in failed quantum well lasers," Appl. Phys. Lett., vol 52, p1347-8,(1988).
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 1347-1348
    • Waters, R.G.1    Bertaska, R.K.2
  • 8
    • 0001520150 scopus 로고    scopus 로고
    • Selective oxidation of buried AlGaAs versus AlAs layers
    • note
    • K.D. Choquette, K.M. Geib, H.H. Chui, B.E. Hammons, H.Q. Hou, T.J. Drummond, R. Hull, "Selective Oxidation of buried AlGaAs versus AlAs Layers," Appl. Phys. Lett., Vol. 69, pp. 1385-87, (1996). Note while compositional differences are stressed in this paper, the grower of the material pointed out that the AlGaAs layer had graded interfaces, while the AlAs layer had abrupt ones, which may also to explain the difference in stress.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 1385-1387
    • Choquette, K.D.1    Geib, K.M.2    Chui, H.H.3    Hammons, B.E.4    Hou, H.Q.5    Drummond, T.J.6    Hull, R.7
  • 9
    • 0032188331 scopus 로고    scopus 로고
    • Gradual degradation in 850-nm vertical-cavity surface-emitting lasers
    • R.W. Herrick and P.M. Petroff, "Gradual degradation in 850-nm vertical-cavity surface-emitting lasers," IEEE J. of Quantum Electronics, vol. 34, 1963-9, (1998).
    • (1998) IEEE J. of Quantum Electronics , vol.34 , pp. 1963-1969
    • Herrick, R.W.1    Petroff, P.M.2
  • 10
    • 0003697142 scopus 로고    scopus 로고
    • Degradation in vertical cavity lasers
    • a Ph.D. Dissertation in Electrical Engineering, published at University of California, Santa Barbara, Sept.; Chapter 8
    • Robert W. Herrick, "Degradation in Vertical Cavity Lasers," a Ph.D. Dissertation in Electrical Engineering, published at University of California, Santa Barbara, Sept. 1997 Chapter 8.
    • (1997)
    • Herrick, R.W.1
  • 11
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    • Ph.D. Disseration, chapters 3 & 4
    • R. W. Herrick, Ph.D. Disseration, chapters 3 & 4.
    • Herrick, R.W.1
  • 15
    • 0000124109 scopus 로고
    • Degradation phemonenology in (Al)GaAs quantum well lasers
    • R.G. Waters, and R.K. Bertaska, "Degradation phemonenology in (Al)GaAs quantum well lasers," Appl. Phys. Lett., vol 52, p179-181, (1988).
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 179-181
    • Waters, R.G.1    Bertaska, R.K.2
  • 16
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    • Current density dependence for dark-line defect growth velocity in strained InGaAs/AlGaAs quantum well laser diodes
    • K. Fukagai, S. Ishikawa, K. Endo, T. Yuasa, "Current density dependence for dark-line defect growth velocity in strained InGaAs/AlGaAs quantum well laser diodes", Japanese J. Appl. Phys, Part 2 (letters), vol. 30, pp. L371-3, (1991).
    • (1991) Japanese J. Appl. Phys, Part 2 (Letters) , vol.30
    • Fukagai, K.1    Ishikawa, S.2    Endo, K.3    Yuasa, T.4
  • 18
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    • R.W. Herrick, Ph.D. Dissertation, Chapter 5
    • Herrick, R.W.1
  • 19
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    • Analysis of VCSEL degradation modes
    • R.W. Herrick, Y.M. Cheng, P.M. Petroff, and others, "Analysis of VCSEL degradation modes," Proc of the SPIE, vol. 2683, pp. 123-133, (1996).
    • (1996) Proc of the SPIE , vol.2683 , pp. 123-133
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.