Gradual degradation in 850-nm vertical-cavity surface-emitting lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 10, 1998, Pages 1963-1969

  Herrick, Robert W ^a,b,c,d,e,f   Petroff, Pierre M ^b,e,g,h,i,j  

^a IEEE   (United States)

^b University of California   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f University of California ^*  (United States)

^g UNIVERSITY OF CALIFORNIA   (United States)

^h Department of Obstetrics Gynecology   (United States)

ⁱ LUCENT TECHNOLOGIES   (United States)

^j AMERICAN PHYSICAL SOCIETY   (United States)

more..

Author keywords

Aging; Aluminum compounds; Electron microscopy; Gallium compounds; Semiconductor device reliability; Surface emitting lasers

Indexed keywords

AGING OF MATERIALS; ELECTRON MICROSCOPY; MIRRORS; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032188331     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.720234     Document Type: Article

References (18)

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