Production of high-speed oxide confined VCSEL arrays for datacom applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4649, Issue , 2002, Pages 142-151

  Bossert, David J ^a   Collins, Doug ^a   Aeby, Ian ^a   Clevenger, J Bridget ^a   Helms, Chris ^a   Luo, Wenlin ^a   Wang, Charlie X ^a   Hou, Hong Q ^a  

^a Encore Optical Devices   (United States)

Author keywords

Datacom; High speed; Oxide confined; VCSEL

Indexed keywords

BANDWIDTH; DATA COMMUNICATION SYSTEMS; LOCAL AREA NETWORKS; OPTICAL DEVICES; TELECOMMUNICATION LINKS;

VERTICAL CAVITY SURFACE EMITTING LASERS; VERY SHORT REACH APPLICATIONS;

SEMICONDUCTOR LASERS;

EID: 0036408177     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.469228     Document Type: Article

References (5)

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2. F. Mederer, et al.' 12.5 Gbit/s data rate fiber transmission using single-mode selectively oxidized GaAs VCSELs at λ=850nm' LEOS '99, IEEE Lasers and Electro-optics Society 12th Annual Meeting, 2, pp. 697-698, 1999.
3. Larry A. Coldren, and Scott W. Corzine' Diode Lasers and Photonic Integrated Circuits' Wiley, New York, 1995.
4. T. Aggerstam, et al.' Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication' Vertical Cavity Surface-Emitting Lasers V, Proceedings of SPIE Vol. 4286, pp. 96-101, 2001.
5. C.-H. Chang, L. Chrostowski and C. J. Chang-Hasnain' Parasitics and design considerations on oxide-implant VCSELs' IEEE Photon. Tech. Lett., 13, 1274-1276, 2001.