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1
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0010484522
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Latest version (2001)
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International Technology Roadmap for Semiconductors. Latest version (2001) is available online at http://public.itrs.net/Files/2001ITRS/Home.htm
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2
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0034763264
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Insertion of EUVL into high volume manufacturing
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Emerging lithographic technologies V
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P. J. Silverman, "Insertion of EUVL into high volume manufacturing", Proceedings of SPIE Vol. 4343, Emerging lithographic technologies V, p. 12-18 (2001).
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(2001)
Proceedings of SPIE
, vol.4343
, pp. 12-18
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Silverman, P.J.1
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3
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0034765744
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Progress of the EUVL alpha tool
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Emerging lithographic technologies V
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H. Meiling, J. Benschop, U. Dinger, and P. Kurtz., "Progress of the EUVL alpha tool", Proceedings of SPIE Vol. 4343, Emerging lithographic technologies V, p. 38-50 (2001).
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(2001)
Proceedings of SPIE
, vol.4343
, pp. 38-50
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Meiling, H.1
Benschop, J.2
Dinger, U.3
Kurtz, P.4
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4
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0010440139
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the internet page of Center for X-Ray Optics (CXRO), Materials Sciences Division, Lawrence Berkeley National Laboratory
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Please consult http:/www-cxro.lbl.gov, the internet page of Center for X-Ray Optics (CXRO), Materials Sciences Division, Lawrence Berkeley National Laboratory.
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5
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0011250436
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Performance results of a new generation of 300 mm lithography systems
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Optical Microlithography XIV
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B. Sluijk,T. Castenmiller, R. du Croo de Jongh, H. jasper, T. Modderman, L. Levasier, E. Loopstra, G. Savenije, M. Boonman, and H. Cox, "Performance results of a new generation of 300 mm lithography systems", Proceedings of SPIE Vol. 4346, Optical Microlithography XIV, p. 544-557 (2001).
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(2001)
Proceedings of SPIE
, vol.4346
, pp. 544-557
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Sluijk, B.1
Castenmiller, T.2
Du Croo de Jongh, R.3
Jasper, H.4
Modderman, T.5
Levasier, L.6
Loopstra, E.7
Savenije, G.8
Boonman, M.9
Cox, H.10
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6
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0034758229
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Feasibility study of EUV scanners
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Emerging lithographic technologies V
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K. Ota, K. Murakami, H. Kondo, T. Oshino, K. Sugisaki and H. Komatsuda, "Feasibility study of EUV scanners", Proceedings of SPIE Vol. 4343, Emerging lithographic technologies V, p. 60-69 (2001).
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(2001)
Proceedings of SPIE
, vol.4343
, pp. 60-69
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Ota, K.1
Murakami, K.2
Kondo, H.3
Oshino, T.4
Sugisaki, K.5
Komatsuda, H.6
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7
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0035758729
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Aerial image sensor for self-calibration of wafer steppers
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Optical Microlithography XIV
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T. Hagiwara, H. Mizutani, N. Kondo, J. Inoue, K. Kaneko, and S. Higashibata, "Aerial image sensor for self-calibration of wafer steppers", Proceedings of SPIE Vol. 4346, Optical Microlithography XIV, p. 1635-1643 (2001).
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(2001)
Proceedings of SPIE
, vol.4346
, pp. 1635-1643
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Hagiwara, T.1
Mizutani, H.2
Kondo, N.3
Inoue, J.4
Kaneko, K.5
Higashibata, S.6
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8
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12844272449
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Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations
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H. Namatsu, T. Yamaguchi, M. Nagase, K. Yamasaki, and K. Kurihara, "Nano-Patterning of a hydrogen Silsesquioxane resist with reduced linewidth fluctuations", Microelectron. Eng. 41/42 (1998) 331.
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(1998)
Microelectron. Eng.
, vol.41-42
, pp. 331
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Namatsu, H.1
Yamaguchi, T.2
Nagase, M.3
Yamasaki, K.4
Kurihara, K.5
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9
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0034318652
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Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography
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Nov/Dec
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F. C. M. J. M. van Delft, J.P. Weterings, A. K. van Langen-Suurling, and J. Romijn, "Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography", J. of Vac. Sci. and Technol. B 18(6) Nov/Dec (2000) 3419.
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(2000)
J. of Vac. Sci. and Technol. B
, vol.18
, Issue.6
, pp. 3419
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Van Delft, F.C.M.J.M.1
Weterings, J.P.2
Van Langen-Suurling, A.K.3
Romijn, J.4
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10
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0034429405
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Sub-10 nm linewidth and overlay performance achieved with a fine-tuned EBPG-5000 TFE electron beam lithography system
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B. E. Maile, W. Henschel, H. Kurz, B. Rienks, R. Polman, and P. Kaars, "Sub-10 nm linewidth and overlay performance achieved with a fine-tuned EBPG-5000 TFE electron beam lithography system", Jpn. J. Appl. Phys. 39 (2000) 6836, Pt. 1, No. 12B.
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(2000)
Jpn. J. Appl. Phys.
, vol.39
, Issue.12 PART 1B
, pp. 6836
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Maile, B.E.1
Henschel, W.2
Kurz, H.3
Rienks, B.4
Polman, R.5
Kaars, P.6
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11
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0010486169
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note
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The similarity of HSQ and fused silica (quartz) is was verified for the optical index of refraction by means of variable angle spectroscopic ellipsometry (VASE). VASE measurements were performed by Daniel Miller, International Sematech, Austin, Texas, United States of America.
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