Impurity distribution in GaN layers obtained by the molecular-beam epitaxy method

Semiconductors

Volumn 30, Issue 2, 1996, Pages 164-166

  Cheng, T S ^a   Jenkins, L C ^a   Hooper, S E ^a   Foxon, C T ^a   Ber, B Ya ^b   Merkulov, A V ^b   Novikov, S V ^b   Tret'yakov, V V ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010352791     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
2. S. Strite, M. E. Lin, and H. Morkoc, Thin Solid Films 231, 197 (1993).
3. R. F. Davis, Proc. IEEE 79, 702 (1991).
4. S. V. Novikov, C. T. Foxon, T. S. Cheng, T. L. Tansley, J. W. Orton, D. E. Lacklison, D. Johnston, N. Bada-Ali, S. Hooper, and L. Eaves, J. Cryst. Growth 146, 340 (1995).
5. C. T. Foxon, T. S. Cheng, S. V. Novikov, D. E. Lacklison, L. C. Jenkins, D. Johnston, J. W. Orton, S. E. Hooper, N. Bada-Ali, T. L. Tansley, and V. V. Tret'yakov in Proceedings of the 8th International Conference on Molecular Beam Epitaxy, MBE-VIII, August 29-September 2, Osaka, 1994, p. 325.
6. T. S. Cheng, L. C. Jenkins, S. E. Hooper, C. T. Foxon, J. W. Orton, and D. E. Lacklison, Appl. Phys. Lett. 66, 1509 (1995).