Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy

Journal of Crystal Growth

Volumn 171, Issue 3-4, 1997, Pages 321-332

  Xin, Y ^a   Brown, P D ^a   Dunin Borkowski, R E ^a   Humphreys, C J ^a   Cheng, T S ^b   Foxon, C T ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL MICROSTRUCTURE; CRYSTAL STRUCTURE; DIFFUSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS DIFFUSION; TERNARY ALLOYS; WURTZITE GALLIUM NITRIDE; ZINCBLENDE GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031077166     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00663-X     Document Type: Article

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