Methacrylonitrile based Si-containing polymers for 157-nm positive resist

Journal of Photopolymer Science and Technology

Volumn 15, Issue 4, 2002, Pages 629-636

  Shinozuka, Toyofumi ^a   Kawakami, Tomoaki ^a   Okamura, Haruyuki ^a   Tsunooka, Masahiro ^a   Shirai, Masamitsu ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

157 nm lithography; Methacrylonitrile; Oxygen plasma; Positive resist; Si containing polymer; Silylation

Indexed keywords

4 ISOPROPENYLPHENOL; METHACRYLIC ACID; METHACRYLONITRILE; OXYGEN; POLY(VINYLPHENOL); POLYMER; SILICON; UNCLASSIFIED DRUG;

AQUEOUS SOLUTION; ARTICLE; DISSOLUTION; FILM; HYDROLYSIS; INFRARED SPECTROSCOPY; LASER; LITHOGRAPHY; MASS; POLYMERIZATION; TECHNOLOGY; ULTRAVIOLET RADIATION;

EID: 0036369836     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.15.629     Document Type: Article

References (18)